PART |
Description |
Maker |
GS880V36BT-250 GS880V18BT-333 GS880V18BT-250 GS880 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 5 ns, PQFP100
|
GSI Technology, Inc. http://
|
AS7C33256FT32_36A AS7C33256FT32_36A.V1.1 AS7C33256 |
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 8.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 36 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/AMMO From old datasheet system Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC
|
A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002 |
110ns 20mA 256K x 8bit CMOS 5.0V-only 70ns 20mA 256K x 8bit CMOS 5.0V-only 100ns 20mA 256K x 8bit CMOS 5.0V-only 120ns 20mA 256K x 8bit CMOS 5.0V-only 150ns 20mA 256K x 8bit CMOS 5.0V-only 90ns 20mA 256K x 8bit CMOS 5.0V-only 55ns 20mA 256K x 8bit CMOS 5.0V-only
|
AMIC Technology
|
GS88136BGD-300I GS88132BT-200 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 5 ns, PBGA165 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
M27C2001-70B6TR M27C2001-12B1 M27C2001-12N6TR M27C |
256K X 8 OTPROM, 70 ns, PDIP32 256K X 8 OTPROM, 120 ns, PDIP32 256K X 8 OTPROM, 120 ns, PDSO32 256K X 8 OTPROM, 80 ns, PDIP32 256K X 8 UVPROM, 80 ns, CDIP32 256K X 8 OTPROM, 120 ns, PQCC32
|
STMICROELECTRONICS
|
M27C400206 M27C4002-90XN6TR M27C4002 M27C4002-10B1 |
4 Mbit (256Kb x16) UV EPROM and OTP EPROM 256K X 16 UVPROM, 70 ns, CDIP40 256K X 16 OTPROM, 150 ns, PQCC44 256K X 16 OTPROM, 200 ns, PDIP40 256K X 16 UVPROM, 150 ns, CDIP40 256K X 16 OTPROM, 120 ns, PQCC44
|
STMICROELECTRONICS[STMicroelectronics]
|
IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号,江户页面模式的DRAM 256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位),江户内存3.3伏,100/83/66兆赫.3伏,100/83/66兆赫56K × 32带扩展数据输出动态内存) 256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
29F002B-90 29F002T-12 29F002T-55 29F002T-90 29F002 |
2M-BIT [256K x 8] CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
GS880V37AT-200I GS880V37AT-250 GS880V37AT-250I GS8 |
256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 3 ns, PQFP100
|
GSI Technology, Inc. GSI[GSI Technology]
|
CY62147EV18LL-55BVXI |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PBGA48
|
Cypress Semiconductor Corp.
|
GS880F36T-11I GS880F36T-14I GS880F32T-12 GS880F36T |
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc. http://
|
KM641003A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|